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Simulation of Carbon Nanotube Based Field Effect Transistors
HOFFA, JOEL L

2007, MS, University of Cincinnati, Engineering : Electrical Engineering.
The scaling of silicon microelectronics along Moore’s Law is going to run into quantum mechanical and other physical fundamental limits. Exotic materials, such as carbon nanotubes, must be examined to determine whether they can surpass silicon as the dominant semiconductor material. Simulation can help determine which research avenues are best to pursue. In this study, the CNTFETToy software, developed at Purdue University, has been evaluated for its effectiveness in simulating experimental devices. The physical parameters (i.e. nanotube diameter, gate oxide thickness, gate dielectric constant, series resistance and temperature) were then varied to determine how best to optimize a fabricated device. Then the simulation parameters (i.e. gate control parameter, drain control parameter, and source Fermi level) were varied to provide a guide for matching simulated output to experimental results. The results of these investigations were used to discuss the required advancements for CNFETs to become a viable semiconductor technology.
Dr. Kenneth Roenker (Advisor)
73 p.

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HOFFA, J. (2007). Simulation of Carbon Nanotube Based Field Effect Transistors. (Electronic Thesis or Dissertation). Retrieved from https://etd.ohiolink.edu/

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HOFFA, JOEL. "Simulation of Carbon Nanotube Based Field Effect Transistors." Electronic Thesis or Dissertation. University of Cincinnati, 2007. OhioLINK Electronic Theses and Dissertations Center. 30 Aug 2015.

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HOFFA, JOEL "Simulation of Carbon Nanotube Based Field Effect Transistors." Electronic Thesis or Dissertation. University of Cincinnati, 2007. https://etd.ohiolink.edu/

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