Doctor of Philosophy, Case Western Reserve University, 1994, Materials Science and Engineering
The electrical properties of polycrystalline silicon (p-type) were investigated by resistivity, C-V, and DLTS measurements. In particular, the influence of oxygen, carbon, and the fast diffusing transition elements (Cu, Ni, Fe, and Cr) in polycrystalline silicon has been studied. Ohmic contacts on polycrystalline silicon specimens were made successfully by Ga-In application by scrubbing or Al evaporation followed by short annealing. For Schottky diodes, Ti/poly-Si (p-type) was used for C-V and DLTS measurements. The objective was to identify the defects which are mainly responsible for the observed electrical changes. The specimens were Cast and Ribbon polycrystalline silicon with different impurity concentrations. Both specimens were annealed over a wide range of temperatures, between 300∼1250°C, to investigate the temperature dependence of the electrical properties, the effect of impurities and the effect of annealing. The electrical changes in polycrystalline silicon as a function of the annealing temperature were observed to depend on the oxygen content. The annealing strongly influenced the oxygen-rich specimens (Ribbon polycrystalline silicon) via the electrical properties of resistivity, carrier concentration, and defect concentration. The maximum values of the resistivitie s and defect concentrations and the minimum values of the carrier concentrations were found between 700∼900°C. The minimum values of the resistivities and trap concentrations and the maximum values of the carrier concentrations were found above The specimens were Cast and Ribbon polycrystalline silicon with different impurity concentrations. Both specimens were annealed over a wide range of temperatures, between 300∼1250°C, to investigate the temperature dependence of the electrical properties, the effect of impurities and the effect of annealing. The electrical changes in polycrystalline silicon as a function of the annealing temperature were observed to depend on the oxygen content. The (open full item for complete abstract)
Committee: W. Williams (Advisor)
Subjects: Engineering, Materials Science