Doctor of Philosophy, The Ohio State University, 2023, Electrical and Computer Engineering
This collection of works is an effort toward finding new solutions to challenges in electromagnetic devices, all connected by the implementation of vanadium dioxide (VO2). VO2 is a phase change material (PCM) that exhibits a reversible phase transition at 68 °C between monoclinic insulating and tetragonal conducting states. We designed, simulated, fabricated, and tested various devices in mmWave and optical wavelength domains. As an alternative to complex solid-state switching networks, we chose VO2 for its ability to react to various stimuli as a PCM, low phase transition temperature, and the freedom to design arbitrary geometries for reconfigurable and smart reactive devices.
First, we experimented with the growth and characterization of VO2 thin films on sapphire and silicon substrates with Al2O3 buffer layers. Traditionally, VO2 has been deposited on sapphire substrates because of the lattice match between the two. This produces films with high resistivity contrast. However, sapphire is not as versatile a substrate material as silicon, being dielectric rather than semiconductor and extremely difficult to etch. To expand the realm of substrates useful for sputtering high quality VO2, we grew and compared such films on C-plane sapphire and silicon wafers with atomic layer deposited (ALD) alumina (Al2O3) films. Silicon has poor lattice match with VO2, and the alumina eliminates that interface. Furthermore, rapid thermal annealing (RTA) the alumina films before sputtering VO2 provides a basis for quasi-epitaxial films that have similar properties to those on the C-plane sapphire substrates. The figure of merit (FOM) resistivity contrast ratios for these variations are 9.76×104, 3.66×103, and 1.46×104 for C-plane sapphire, as- deposited amorphous ALD alumina on Si, and RTA ALD alumina on Si, respectively. We also characterized the films using X-Ray diffraction, atomic force microscopy, and scanning electron microscopy.
In the next step, we examined the material (open full item for complete abstract)
Committee: Nima Ghalichechian (Advisor); Fernando Teixeira (Committee Member); Asimina Kiourti (Committee Co-Chair)
Subjects: Electrical Engineering; Electromagnetics; Materials Science; Nanotechnology; Technology