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Bhatta FINAL 5 7 24 with cert.pdf (3.1 MB)

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High-Frequency Switching Performance Evaluation and Three-Phase Motor Drive Applications with GaN Power Devices

Bhatta, Bhawana
http://rave.ohiolink.edu/etdc/view?acc_num=ysu1715185246975721

Abstract Details

2024, Master of Science in Engineering, Youngstown State University, Department of Electrical and Computer Engineering.
With technological advancements in the field of wide bandgap semiconductors, the role of (Gallium Nitride) GaN transistors has been contributing significantly to the aspects of higher switching frequency operation with lower switching losses, thereby increasing the efficiency of the device. The study of GaN HEMT devices, due to their higher switching frequency and high-performance semiconducting properties, is a huge topic of interest within the power electronics community, which is why the need for its academic study and research is significant. The CoolGaN™ ™ 600V HEMT half-bridge evaluation board used for this paper is manufactured by Infineon Technologies, featuring a high voltage gate driver IC and up to MHz’s range of switching frequency. The Infineon CoolGaN™ 600V HEMT half-bridge evaluation platform is studied for its switching behavior. The GaN device is utilized to explore motor drive applications at different frequency switching conditions, ranging from 50 kHz up to 1MHz. The high-frequency PWM signals are programmed and generated using an Artrix-7 FPGA. An SPWM scheme of control signal generation is digitally implemented in the FPGA. The generated PWM signals from the FPGA are used as the switching gate signal for an and to drive a three-phase gallium nitride inverter with balanced resistive and inductive loads. The output phase voltage and phase current waveforms are monitored and analyzed for their behavior and power factor. The research in this thesis investigates the consequences of employing GaN transistors for high frequency switching in motor drive applications through a combination of studies, simulations, and experiments. This investigation holds significant importance within the realm of industrial power electronics, as it aims to advance efficiency, compactness, and cost-effectiveness across diverse applications.
Frank Li, PhD (Advisor)
Vamsi Borra, PhD (Committee Member)
Pedro Cortes, PhD (Committee Member)
60 p.
Electrical Engineering
Gallium Nitride (GaN); SPWM; SVPWM; FPGA; High-Frequency PWM; 3-Phase Voltage Source Inverter

Recommended Citations

Citations

  • Bhatta, B. (2024). High-Frequency Switching Performance Evaluation and Three-Phase Motor Drive Applications with GaN Power Devices [Master's thesis, Youngstown State University]. OhioLINK Electronic Theses and Dissertations Center. http://rave.ohiolink.edu/etdc/view?acc_num=ysu1715185246975721

    APA Style (7th edition)

  • Bhatta, Bhawana. High-Frequency Switching Performance Evaluation and Three-Phase Motor Drive Applications with GaN Power Devices. 2024. Youngstown State University, Master's thesis. OhioLINK Electronic Theses and Dissertations Center, http://rave.ohiolink.edu/etdc/view?acc_num=ysu1715185246975721.

    MLA Style (8th edition)

  • Bhatta, Bhawana. "High-Frequency Switching Performance Evaluation and Three-Phase Motor Drive Applications with GaN Power Devices." Master's thesis, Youngstown State University, 2024. http://rave.ohiolink.edu/etdc/view?acc_num=ysu1715185246975721

    Chicago Manual of Style (17th edition)

ysu1715185246975721
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© 2024, all rights reserved.
This open access ETD is published by Youngstown State University and OhioLINK.