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Electrical Properties of Molybdenum Silicon Carbide Schottky Barrier Diodes

Naredla, Sai Bhargav
http://orcid.org/0000-0001-7523-6294
http://rave.ohiolink.edu/etdc/view?acc_num=ysu155901806279725

Abstract Details

2019, Master of Science in Engineering, Youngstown State University, Rayen School of Engineering.
Molybdenum (Mo) is one of the metals categorized as refractory metal due to its thermal properties. For that reason, it is very attractive for high-temperature applications. This thesis covers the investigation of silicon carbide (SiC) Schottky diodes fabricated using Mo as the Schottky contact. The Mo Schottky contacts were deposited using magnetron sputtering on the n-type 4H-SiC. The temperature of the SiC substrates was varied from 25 °C to 900 °C. The electrical properties of the diodes were determined by current-voltage, capacitance-voltage and current-voltage-temperature measurements. Structural properties of Schottky contacts deposited at different temperatures were also characterized using x-ray diffraction spectroscopy. The results obtained reveal that the as-deposited diodes had energy barrier heights that ranged from 1.02 to 1.67 eV and ideality factors varying from 1.04 to 1.23. Contacts deposited at 600 °C produced the optimum property consisting of a barrier height of 1.34 eV and ideality factor of 1.05. The diodes were further thermally processed by keeping them exposed to 500 °C for 24 hours diodes in vacuum. From these, the barrier height ranging from 1.00 eV to 1.70 eV was obtained. The variation in electrical properties is explained as due to changes in crystal quality. Current-voltage temperature measurements to further characterize the electrical properties of diodes at different temperatures were performed. Contacts deposited at 500°C produced the largest Richardson’s constant (A**) of 3.74 A/K-cm2 and a barrier height of 1.32 eV. Changes in ideality factors and barrier heights are observed due to the formation of interfacial silicide layers. X-ray diffraction results show the formation of MoSi2 and Mo5Si2
Tom Nelson Oder, PhD (Advisor)
Jalal Jalali, PhD (Committee Member)
Faramarz Mossayebi, PhD (Committee Member)
63 p.
Electrical Engineering; Physics
Schottky barrier diodes, silicon carbide, molybdenum, high-temperature didoes

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Citations

  • Naredla, S. B. (2019). Electrical Properties of Molybdenum Silicon Carbide Schottky Barrier Diodes [Master's thesis, Youngstown State University]. OhioLINK Electronic Theses and Dissertations Center. http://rave.ohiolink.edu/etdc/view?acc_num=ysu155901806279725

    APA Style (7th edition)

  • Naredla, Sai Bhargav. Electrical Properties of Molybdenum Silicon Carbide Schottky Barrier Diodes. 2019. Youngstown State University, Master's thesis. OhioLINK Electronic Theses and Dissertations Center, http://rave.ohiolink.edu/etdc/view?acc_num=ysu155901806279725.

    MLA Style (8th edition)

  • Naredla, Sai Bhargav. "Electrical Properties of Molybdenum Silicon Carbide Schottky Barrier Diodes." Master's thesis, Youngstown State University, 2019. http://rave.ohiolink.edu/etdc/view?acc_num=ysu155901806279725

    Chicago Manual of Style (17th edition)

ysu155901806279725
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© 2019, all rights reserved.
This open access ETD is published by Youngstown State University and OhioLINK.
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