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THE PHOTONIC APPLICATIONS OF FOCUSED ION BEAM MICROMACHINGING ON GaN

CHYR, YEONG-NING
http://rave.ohiolink.edu/etdc/view?acc_num=ucin987430536

Abstract Details

2001, PhD, University of Cincinnati, Engineering : Electrical Engineering.
Ga + focused ion beam (FIB) micromachining was utilized on GaN for the fabrication of photonic devices, such as channel waveguides, laser facets, reflectors, etc. FIB micromachining can provide several advantages on device fabrication: maskless and resistless process, local modification of the process conditions, and smooth surface on desired features. GaN and related materials are of great success for visible and UV optical devices. However, some fabrication issues are still remaining to overcome on sample preparation and processing. In particular, high reflectivity mirror facets is hard to obtain by conventional processing procedures due to the large misalignment between sapphire and GaN-based materials. Therefore, it is important to develop a simple and efficient processing technique. The main objective of this work is to combine dry etching techniques to manufacture the ridge waveguides and FIB micromaching to fabricate small period Distributed Bragg Reflector (DBR) mirrors. The milling selectivity of GaN to the grown substrates such as sapphire, SiC and Si (111) is 3x better. By introducing I 2 gas, the etching rates of FIB micromachining with gas-assisted etching are enhanced 6 - 8x faster than that of FIB micromachining alone on GaN. To fabricate GaN waveguides, the optimized conditions of reactive ion etching are 20 sccm of Cl 2 , 400 Watts of RIE power as well as the chamber pressure of 5 mTorr. Rapid thermal annealing is to recover the ion damages created in the processing of dry etching and FIB micromachining. The modeling of Jone's matrix theory is to provide the information of reflectivity for the structure of Bragg gratings. The effect of gratings is obtained from loss measurement to measure the propagation of laser light sources in the SiON ridge waveguides. However, the width shifting of gratings generated by FIB micromachining causes the reflectivity shifting in the loss measurements. The AFM scanning and modeling confirm that phenomena due to the process of FIB milling. The structures of deep DBR gratings and waveguides show the capability of FIB micromachining to provide an alternative and efficient method to fabricate optoelectronic devices on GaN. We believe that FIB micromachining is a very promising technique on GaN and other materials.
Dr. Andrew Steckl (Advisor)
175 p.
focused ion beam; GaN; focused ion beam micromachining; photonic devices; DBR gratings

Recommended Citations

Citations

  • CHYR, Y.-N. (2001). THE PHOTONIC APPLICATIONS OF FOCUSED ION BEAM MICROMACHINGING ON GaN [Doctoral dissertation, University of Cincinnati]. OhioLINK Electronic Theses and Dissertations Center. http://rave.ohiolink.edu/etdc/view?acc_num=ucin987430536

    APA Style (7th edition)

  • CHYR, YEONG-NING. THE PHOTONIC APPLICATIONS OF FOCUSED ION BEAM MICROMACHINGING ON GaN. 2001. University of Cincinnati, Doctoral dissertation. OhioLINK Electronic Theses and Dissertations Center, http://rave.ohiolink.edu/etdc/view?acc_num=ucin987430536.

    MLA Style (8th edition)

  • CHYR, YEONG-NING. "THE PHOTONIC APPLICATIONS OF FOCUSED ION BEAM MICROMACHINGING ON GaN." Doctoral dissertation, University of Cincinnati, 2001. http://rave.ohiolink.edu/etdc/view?acc_num=ucin987430536

    Chicago Manual of Style (17th edition)

ucin987430536
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© 2001, all rights reserved.
This open access ETD is published by University of Cincinnati and OhioLINK.
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