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Identification and Control of Native Point Defects in Wide Bandgap Semiconducting ZnGeN2, ScN, ZnO, and Ga2O3

Haseman, Micah S
http://orcid.org/0000-0003-3008-5036
http://rave.ohiolink.edu/etdc/view?acc_num=osu1680279456451073

Abstract Details

2023, Doctor of Philosophy, Ohio State University, Physics.
Wide bandgap semiconductors (WBGS) are an exceptionally important class of materials for next-generation microelectronics that exhibit a diverse set of physical phenomena spanning piezo- and ferroelectricity, ferromagnetism, superconductivity, and 2-dimensional electron and hole gases. Oxide and nitride WBGS are particularly well-positioned to accelerate the advancement of renewable energy technologies and improve power electronic efficiencies and life-cycle costs. The identification and capacity for control of optically and electrically active point defects are central in transitioning these materials from research laboratory to practical applications. This dissertation investigates the optoelectronic property-structure relationship of native point defects in wide bandgap semiconductors. By combining spatially resolved cathodoluminescence spectroscopy and surface photovoltage spectroscopy (SPS) with surface sensitive x-ray photoelectron spectroscopy (XPS), native anionic point defects and cation defect complexes are identified in ternary ZnGeN2 and binary ScN. The control and refinement of these defects with material growth is essential for coherent integration with complementary GaN architectures. Direct control of point defects on the nanoscale is demonstrated in oxide semiconducting Ga2O3 vertical devices and ZnO nanowire structures by applying electric fields to stimulate the migration of intrinsic defect species. Redistribution of oxygen vacancies (VO) in high power Ga2O3 is demonstrated for the first time by nanoscale hyperspectral imaging after strong reverse biasing while manipulation of oxygen vacancies in suspended ZnO nanowires is selectively driven by applied bias through nanoscale contacts. The density of positively charged interfacial VO is tuned via electric fields to control Schottky barrier heights and reversibly convert metal-ZnO interfaces between Ohmic and Schottky behavior, highlighting the need to consider intrinsic point defect migration in-operando while demonstrating a promising new avenue for nanoscale oxide refinement and processing.
Leonard Brillson (Advisor)
Ciriyam Jayaprakash (Committee Member)
Andrew Heckler (Committee Member)
Jay Gupta (Committee Member)
184 p.
Physics
semiconductors, defect, defect migration, electric field, high bias, dielectric breakdown, zinc, germanium, scandium, gallium, nitride, oxide.

Recommended Citations

Citations

  • Haseman, M. S. (2023). Identification and Control of Native Point Defects in Wide Bandgap Semiconducting ZnGeN2, ScN, ZnO, and Ga2O3 [Doctoral dissertation, Ohio State University]. OhioLINK Electronic Theses and Dissertations Center. http://rave.ohiolink.edu/etdc/view?acc_num=osu1680279456451073

    APA Style (7th edition)

  • Haseman, Micah. Identification and Control of Native Point Defects in Wide Bandgap Semiconducting ZnGeN2, ScN, ZnO, and Ga2O3. 2023. Ohio State University, Doctoral dissertation. OhioLINK Electronic Theses and Dissertations Center, http://rave.ohiolink.edu/etdc/view?acc_num=osu1680279456451073.

    MLA Style (8th edition)

  • Haseman, Micah. "Identification and Control of Native Point Defects in Wide Bandgap Semiconducting ZnGeN2, ScN, ZnO, and Ga2O3." Doctoral dissertation, Ohio State University, 2023. http://rave.ohiolink.edu/etdc/view?acc_num=osu1680279456451073

    Chicago Manual of Style (17th edition)

osu1680279456451073
178
© 2023, some rights reserved.Creative Commons License Identification and Control of Native Point Defects in Wide Bandgap Semiconducting ZnGeN2, ScN, ZnO, and Ga2O3 by Micah S Haseman is licensed under a Creative Commons Attribution-NonCommercial-NoDerivs 3.0 Unported License. Based on a work at etd.ohiolink.edu.
This open access ETD is published by The Ohio State University and OhioLINK.