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Gallium Nitride and Aluminum Gallium Nitride Heterojunctions for Electronic Spin Injection and Magnetic Gadolinium Doping

Hoy, Daniel R.
http://rave.ohiolink.edu/etdc/view?acc_num=osu1331855661

Abstract Details

2012, Master of Science, Ohio State University, Physics.
As the power requirements of computation for large scale and mobile applications increase and the fundamental limits of current technology are being approached, the development of novel computational schema is required to continue the meteoric improvements in processing. One such schema, spintronics, relies on manipulation of the magnetic state of electrons in computation. Such approaches to computation would be facilitated by the development of high-quality ferromagnetic semiconductors capable of room temperature operation and by controlled injection of magnetically polarized electrons into conventional semiconductors. The first part of this work explores the utility of gadolinium doped GaN/AlGaN heterojunctions as a magnetic semiconductor system. The extremely large magnetization per magnetic dopant atom observed in gadolinium doped gallium nitride is also observed in some, but not all, of these heterojunctions. The second part of this work involves the fabrication of spin valve devices on undoped GaN/AlGaN heterojunctions. Such devices present one potential avenue for the control of magnetically polarized current within conventional semiconductor systems.
Ezekiel Johnston-Halperin (Advisor)
Roberto Myers (Advisor)
72 p.
Condensed Matter Physics; Physics
spintronics; spin injection; spin precession; dilute magnetic semiconductor; GaN; AlGaN; heterostructure; 2DHG; 2DEG

Recommended Citations

Citations

  • Hoy, D. R. (2012). Gallium Nitride and Aluminum Gallium Nitride Heterojunctions for Electronic Spin Injection and Magnetic Gadolinium Doping [Master's thesis, Ohio State University]. OhioLINK Electronic Theses and Dissertations Center. http://rave.ohiolink.edu/etdc/view?acc_num=osu1331855661

    APA Style (7th edition)

  • Hoy, Daniel. Gallium Nitride and Aluminum Gallium Nitride Heterojunctions for Electronic Spin Injection and Magnetic Gadolinium Doping. 2012. Ohio State University, Master's thesis. OhioLINK Electronic Theses and Dissertations Center, http://rave.ohiolink.edu/etdc/view?acc_num=osu1331855661.

    MLA Style (8th edition)

  • Hoy, Daniel. "Gallium Nitride and Aluminum Gallium Nitride Heterojunctions for Electronic Spin Injection and Magnetic Gadolinium Doping." Master's thesis, Ohio State University, 2012. http://rave.ohiolink.edu/etdc/view?acc_num=osu1331855661

    Chicago Manual of Style (17th edition)

osu1331855661
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© 2012, all rights reserved.
This open access ETD is published by The Ohio State University and OhioLINK.