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Monolithic integration of III-V optoelectronics on SI

Kwon, Ojin
http://rave.ohiolink.edu/etdc/view?acc_num=osu1124192126

Abstract Details

2005, Doctor of Philosophy, Ohio State University, Electrical Engineering.
Integration of III-V materials on Si substrates has been a driving force in the area of lattice-mismatched growth to selectively provide the complementary material properties of compound semiconductors within conventional Si technology. This materials integration potentially serves as a novel host for next generation technologies to maintain the current rate of progress in data speed and capacity. There are barriers present to integrate III-V materials to Si such as mismatches in lattice constant (for example, 4 % between GaAs and Si, 8 % for InP), crystal symmetry (polar vs. non-polar), thermal characteristics (typically over 250 % thermal expansion coefficient difference between III-V materials and Si), and chemistry. Extensive efforts have focused on achieving successful integration of III-As materials (mainly GaAs/AlGaAs) on Si via heteroepitaxy, while advances in materials integration led state-of-the-art device performance by leveraging heteroepitaxial versatility to tailor material properties among compound III-V materials. Recent progress on graded SiGe relaxed buffers produced successful results with low threading dislocation density of ~ 1 × 10 6 cm -2 achieved for the relaxed Ge over large area Si wafers, consequently leading to outstanding device-quality GaAs materials grown on Si and high-performance optoelectronic devices. However, optoelectronic devices emitting in the visible portion of the spectrum have yet to be explored using this promising approach. The present work explores the untapped opportunities of integrated III-P materials on Si enabled by relaxed SiGe/Si, therefore verifying the concept of SiGe/Si that is broadly applicable for monolithically integrating optical and electronic technologies at the wafer level. One of the ultimate proofs for examining the quality of the materials being integrated is a demonstration of the stimulated emission. The generation of coherent light originates from interaction between photons and population-inverted minority carriers; therefore the epitaxial defects from the integration process are extremely critical. To date, the optical coherency of integrated III-P/Si materials in the visible spectrum have yet to be explored and there have been no reports made to achieve this goal by any means of heteroepitaxial integrations. This thesis reviews efforts toward achieving room temperature operating visible AlGaInP laser diodes grown on the relaxed SiGe/Si substrates by molecular beam epitaxy.
Steven Ringel (Advisor)
III/V on Si; SiGe; Metamorphic; Monolithic Integration; AlGaInP; Visible LED; Visible LD

Recommended Citations

Citations

  • Kwon, O. (2005). Monolithic integration of III-V optoelectronics on SI [Doctoral dissertation, Ohio State University]. OhioLINK Electronic Theses and Dissertations Center. http://rave.ohiolink.edu/etdc/view?acc_num=osu1124192126

    APA Style (7th edition)

  • Kwon, Ojin. Monolithic integration of III-V optoelectronics on SI. 2005. Ohio State University, Doctoral dissertation. OhioLINK Electronic Theses and Dissertations Center, http://rave.ohiolink.edu/etdc/view?acc_num=osu1124192126.

    MLA Style (8th edition)

  • Kwon, Ojin. "Monolithic integration of III-V optoelectronics on SI." Doctoral dissertation, Ohio State University, 2005. http://rave.ohiolink.edu/etdc/view?acc_num=osu1124192126

    Chicago Manual of Style (17th edition)

osu1124192126
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© 2005, all rights reserved.
This open access ETD is published by The Ohio State University and OhioLINK.
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