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Study of Light Emission from GeSbTe Phase-Change Materials Due to Doping

Hilton, Brandon J
http://orcid.org/0000-0002-4137-8777
http://rave.ohiolink.edu/etdc/view?acc_num=dayton1671127888873201

Abstract Details

2022, Master of Science (M.S.), University of Dayton, Electro-Optics.
GeSbTe (GST) is a phase-change material that has proved useful for decades. It has seen use in optical disk memory as well as other forms of memory such as phase-change random access memory, or PCRAM, and it is still seeing use today in such devices. It is a material with extraordinary capabilities and these capabilities are further enhanced by doping GST with other materials. GST is a well-studied material in literature, and although it is extensively studied in its undoped form, it has also been extensively studied using different dopants. Dopants serve to improve the electrical, thermal, and optical properties of GST and they have been demonstrated to do so, yet not many have studied the optical emission of GST. Recently, it has been demonstrated that light emission can be achieved from GST by doping it with Ni. In this work, we fabricated layers of undoped, Ni-doped, and W-doped GST and characterized them using energy dispersive X-ray spectroscopy (EDX). The GST layers were subjected to annealing at temperatures of up to 440 °C, after which Raman spectroscopy was performed on each sample. The samples undergo a phase change from amorphous to face-centered cubic (FCC) and hexagonal close-packed (HCP) when annealed at different temperatures. Finally, photoluminescence measurements were performed on the fabricated layers. The undoped GST did not exhibit any luminescence,while the Ni-doped GST showed several luminescence peaks, with the most intense being at 988 nm and approximately 4 nm wide in the HCP phase. In the case of W-doped GST, no luminescence was observed in any state.
Jay Mathews (Advisor)
Jonathan Slagle (Committee Member)
Mariacristina Rumi (Committee Member)
Partha Banerjee (Committee Member)
76 p.
Materials Science; Optics; Physics
GeSbTe; Ge2Sb2Te5, W-GST; Ni-GST; nickel-doped; tungsten-doped; w-doped; ni-doped; photoluminescence; fluorescence; light emission; phase-change; phase-change materials; semiconductor light emission

Recommended Citations

Citations

  • Hilton, B. J. (2022). Study of Light Emission from GeSbTe Phase-Change Materials Due to Doping [Master's thesis, University of Dayton]. OhioLINK Electronic Theses and Dissertations Center. http://rave.ohiolink.edu/etdc/view?acc_num=dayton1671127888873201

    APA Style (7th edition)

  • Hilton, Brandon. Study of Light Emission from GeSbTe Phase-Change Materials Due to Doping. 2022. University of Dayton, Master's thesis. OhioLINK Electronic Theses and Dissertations Center, http://rave.ohiolink.edu/etdc/view?acc_num=dayton1671127888873201.

    MLA Style (8th edition)

  • Hilton, Brandon. "Study of Light Emission from GeSbTe Phase-Change Materials Due to Doping." Master's thesis, University of Dayton, 2022. http://rave.ohiolink.edu/etdc/view?acc_num=dayton1671127888873201

    Chicago Manual of Style (17th edition)

dayton1671127888873201
161
© 2022, some rights reserved.Creative Commons License Study of Light Emission from GeSbTe Phase-Change Materials Due to Doping by Brandon J Hilton is licensed under a Creative Commons Attribution-NonCommercial-NoDerivs 3.0 Unported License. Based on a work at etd.ohiolink.edu.
This open access ETD is published by University of Dayton and OhioLINK.
Release 3.2.12