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DEVELOPMENT OF A HIGH FREQENCY CLASS-A AMPLIFIER FOR HIGH TEMPERATURE WIRELESS MICROSYSTEMS BASED ON A SILICON CARBIDE STATIC INDUCTION TRANSISTOR

Grgat, Jonathon Ryan
http://orcid.org/0009-0001-2036-0471
http://rave.ohiolink.edu/etdc/view?acc_num=case1713127584138282

Abstract Details

2024, Doctor of Philosophy, Case Western Reserve University, EECS - Electrical Engineering.
Next generation gas turbine engines will incorporate integrated microelectronic sensors designed to enhance aircraft functionality, engine efficiency, and safety by direct measurement of temperature, pressure, air flow and other parameters. Monitoring these parameters requires positioning sensors in the hot zone of the engine with temperatures in excess of 400°C. At these temperatures, small signal amplification is needed at the transducer to distinguish the desired signal from significant electronic noise generated by the engine. The most demanding applications are associated with locations that can only be accessed by wireless connections, necessitating the need for on-board amplifiers, oscillators, mixers and other radio frequency circuits that exhibit stable operation at high temperatures. To address this technology gap, a 50 MHz Class-A amplifier based on a high power silicon carbide static induction transistor (SiC SIT) and designed to operate at 400°C was 18 developed. The Class-A architecture was selected for its simple design and the SiC SIT was selected due to its potential for low power operation at high frequencies and high temperatures. The development of the amplifier involved: (1) characterization of a 4H-SiC SIT at temperatures up to 400°C, (2) development of a small signal model that emulates the performance of a 4H-SiC SIT for temperatures up to 400οC, (3) modeling-based design of a SiC SIT-based Class-A amplifier using the small-signal SiC SIT model, (4) development of capacitors, resistors and inductors for operation at 400°C and (5) fabrication of the Class-A amplifier and testing at 400°C. For an Ids of 40 mA, the SiC SIT exhibited a S21 gain of 9.35 dB at 400°C, only a ~ 40% reduction from room temperature. The transconductance was 60 mS at 400°C, which corresponds to a transition frequency of 270 MHz, well above the design frequency. For the amplifier, the S11 and S22 parameters showed desired operation at 50 MHz with a difference between measured and simulated results of only 1.6 dB and 4.3 dB, respectively. The measured and simulated S21 gain differed by only 3.89 dB at 50 MHz. The K- and μ-factors showed that the amplifier exhibits stable operation at 400°C and 50 MHz.
Dr. Christian Zorman (Advisor)
144 p.
Engineering
High Temperature; High Frequency; SiC; Amplifier: Model; Static Induction Transistor

Recommended Citations

Citations

  • Grgat, J. R. (2024). DEVELOPMENT OF A HIGH FREQENCY CLASS-A AMPLIFIER FOR HIGH TEMPERATURE WIRELESS MICROSYSTEMS BASED ON A SILICON CARBIDE STATIC INDUCTION TRANSISTOR [Doctoral dissertation, Case Western Reserve University]. OhioLINK Electronic Theses and Dissertations Center. http://rave.ohiolink.edu/etdc/view?acc_num=case1713127584138282

    APA Style (7th edition)

  • Grgat, Jonathon. DEVELOPMENT OF A HIGH FREQENCY CLASS-A AMPLIFIER FOR HIGH TEMPERATURE WIRELESS MICROSYSTEMS BASED ON A SILICON CARBIDE STATIC INDUCTION TRANSISTOR. 2024. Case Western Reserve University, Doctoral dissertation. OhioLINK Electronic Theses and Dissertations Center, http://rave.ohiolink.edu/etdc/view?acc_num=case1713127584138282.

    MLA Style (8th edition)

  • Grgat, Jonathon. "DEVELOPMENT OF A HIGH FREQENCY CLASS-A AMPLIFIER FOR HIGH TEMPERATURE WIRELESS MICROSYSTEMS BASED ON A SILICON CARBIDE STATIC INDUCTION TRANSISTOR." Doctoral dissertation, Case Western Reserve University, 2024. http://rave.ohiolink.edu/etdc/view?acc_num=case1713127584138282

    Chicago Manual of Style (17th edition)

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© 2024, all rights reserved.
This open access ETD is published by Case Western Reserve University School of Graduate Studies and OhioLINK.
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