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ELECTRONIC TRANSPORT AT SEMICONDUCTOR AND PEROVSKITE OXIDE INTERFACES

Goble, Nicholas James
http://rave.ohiolink.edu/etdc/view?acc_num=case1454002713

Abstract Details

2016, Doctor of Philosophy, Case Western Reserve University, Physics.
The work discussed in this thesis represents the accumulation of research I performed throughout my doctoral studies. My studies were focused towards two-dimensional electronic transport in semiconductor and perovskite oxide interfaces. Electronic materials with low dimensionality provides experimentalists and theorists with incredible systems to probe physics at non-intuitive levels. Once considered “toy problems,” low-dimensional systems, particularly in two dimensions, are now treated as highly relevant, modern electronic materials on the verge of being used in next-generation technology. This thesis entails three main parts, each contributing new knowledge to the field of two-dimensional electronics and condensed matter physics in general. The first part, found in Chapter 3, analyzes short-range scattering effects in two-dimensional GaAs/AlGaAs quantum wells. The effect of aluminum concentration in the material is correlated to the non-monotonic resistance behavior at low temperatures through the short-range disorder potential. By accounting for different electronic scattering mechanisms, temperature-dependent resistance is shown to have a universal behavior, independent of short-range scattering. Chapters 4 transitions from two-dimensional electron gasses in GaAs to quasi-two-dimensional electron gasses in perovskite oxides, specifically gamma-Al2O3/SrTiO3 heterointerfaces. For the first time in that system, a metal-to-insulator transition is measured by backgating the strontium titanate. By measuring the carrier density, it is shown that immobile charge carriers are induced through backgating. Chapter 5 discusses my research on the cubic-to-tetragonal structural phase transition in LaAlO3/SrTiO3 heterointerfaces. By engineering micron-scale devices, I was able to measure the electronic transport properties of tetragonal domain walls below the structural transition temperature. Domain walls are shown to cause anisotropic resistance, which is measurable on small-scale devices. These three studies significantly contribute to the understanding of two-dimensional electronic transport. They elucidate scattering mechanisms at low temperatures, tuning of the metal-to-insulator transition in a perovskite oxide, and electrical transport through grain boundaries. Overall, this work continues to push our knowledge of two-dimensional systems further, toward achieving a complete understanding of low-dimensional transport in complex systems.
Xuan Gao (Advisor)
Harsh Mathur (Committee Member)
Kathleen Kash (Committee Member)
Alp Sehirlioglu (Committee Member)
107 p.
Condensed Matter Physics; Physics; Solid State Physics
condensed matter; semiconductors; low dimensional; two dimensional; gallium arsenide; strontium titanate; electronic scattering; electronic transport; perovskite; oxides; domain wall; aluminum oxide; electron gas; strong interactions; low temperature

Recommended Citations

Citations

  • Goble, N. J. (2016). ELECTRONIC TRANSPORT AT SEMICONDUCTOR AND PEROVSKITE OXIDE INTERFACES [Doctoral dissertation, Case Western Reserve University]. OhioLINK Electronic Theses and Dissertations Center. http://rave.ohiolink.edu/etdc/view?acc_num=case1454002713

    APA Style (7th edition)

  • Goble, Nicholas. ELECTRONIC TRANSPORT AT SEMICONDUCTOR AND PEROVSKITE OXIDE INTERFACES. 2016. Case Western Reserve University, Doctoral dissertation. OhioLINK Electronic Theses and Dissertations Center, http://rave.ohiolink.edu/etdc/view?acc_num=case1454002713.

    MLA Style (8th edition)

  • Goble, Nicholas. "ELECTRONIC TRANSPORT AT SEMICONDUCTOR AND PEROVSKITE OXIDE INTERFACES." Doctoral dissertation, Case Western Reserve University, 2016. http://rave.ohiolink.edu/etdc/view?acc_num=case1454002713

    Chicago Manual of Style (17th edition)

case1454002713
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© 2016, all rights reserved.
This open access ETD is published by Case Western Reserve University School of Graduate Studies and OhioLINK.