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Full text release has been delayed at the author's request until September 01, 2025

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Growth Processing and Characterization of Gallium Oxide and Indium Gallium Oxide Thin Films

Francis, Clifford Antonio
http://rave.ohiolink.edu/etdc/view?acc_num=bgsu1688088199855211

Abstract Details

2023, Master of Science (MS), Bowling Green State University, Physics.
Gallium oxide has been recognized as a promising Ultrawide-Bandgap(UWBG) semiconductor with a band gap ranging from 4.3-5.3eV. Beta gallium oxide, a polymorph of Gallium Oxide, has an ultra-wide bandgap of 4.9eV making it a great candidate for next-generation power electronics. In addition, UWBG semiconductors are capable of large breakdown voltage and has the potential of becoming a high-effciency switching device. The electrical characteristics are then analyzed using a Hall effect. Some samples are often annealed or doped to improve their electrical properties. The work presented in this thesis shows the process of recently developed gallium oxide flms with a focus on indium gallium oxide samples. The result of our research shows that signifcant changes to the electrical properties of gallium oxide films can be achieved through doping and annealing. In order to utilize the powerful properties of gallium oxide, this work incorporated indium to grow indium gallium oxide. Homogeneous and heterogeneous samples of indium gallium oxide were grown on the MOCVD with a unique recipe that allowed for controlled precursor injection. Furthermore, growth parameters were varied to test their effectiveness in the interplay between indium oxide and gallium oxide growth. The samples were then characterized using X-ray Diffraction(XRD) and Hall effect system. The XRD system allows for further understanding between the growth parameters and the resulting structure of the material. The combination of the XRD system and Hall effects allows for a great correlation between the MOCVD growth parameters and the resulting film qualities. Samples are annealed in hydrogen to enhance their electrical properties. Our experiments demonstrate enhanced electrical characteristics and even p-type conductivity can be produced with effective growth processing.
Farida Selim, Ph.D (Committee Chair)
Marco Nardone, Ph.D (Committee Member)
Alexey Zayak, Ph.D (Committee Member)
90 p.
Physics
MOCVD; Metal Organic Chemical Vapor Deposition; Gallium Oxide; Indium Gallium Oxide; thin films; Semiconductor;

Recommended Citations

Citations

  • Francis, C. A. (2023). Growth Processing and Characterization of Gallium Oxide and Indium Gallium Oxide Thin Films [Master's thesis, Bowling Green State University]. OhioLINK Electronic Theses and Dissertations Center. http://rave.ohiolink.edu/etdc/view?acc_num=bgsu1688088199855211

    APA Style (7th edition)

  • Francis, Clifford. Growth Processing and Characterization of Gallium Oxide and Indium Gallium Oxide Thin Films . 2023. Bowling Green State University, Master's thesis. OhioLINK Electronic Theses and Dissertations Center, http://rave.ohiolink.edu/etdc/view?acc_num=bgsu1688088199855211.

    MLA Style (8th edition)

  • Francis, Clifford. "Growth Processing and Characterization of Gallium Oxide and Indium Gallium Oxide Thin Films ." Master's thesis, Bowling Green State University, 2023. http://rave.ohiolink.edu/etdc/view?acc_num=bgsu1688088199855211

    Chicago Manual of Style (17th edition)

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This open access ETD is published by Bowling Green State University and OhioLINK.