MS, University of Cincinnati, 2011, Engineering and Applied Science: Electrical Engineering
We introduce a Raman profiling method to track heterogeneity of melts over days as starting materials are reacted and batch compositions homogenize. Results on 2 gram sized dry GexSe100-x melts, reacted at 950°C, show that they homogenize on a scale of 10 microns after 168 hours in a process that has two steps. In the first step, elements of local structure evolve, followed by extended range structures forming as the Ge/Se stoichiometry across a batch composition equalizes by a slow diffusive process with a Diffusion constant, D = 2 x 10-6 cm2/sec. Such homogenization is precursive to self-organization. We have synthesized 21 glass compositions spanning the range, 10% < x < 33.33%, and have examined their thermal, optical and mechanical behavior in modulated DSC, Dispersive Raman scattering and Molar volume experiments respectively. These data, on glasses of unprecedented homogeneity, reveal sharply defined rigidity transition near xc (1) = 19.5(5)% and stress transition near xc(2) = 26.0(5)%, with optical elastic power-laws in the Intermediate Phase (IP: 19.5% < x < 26.0%) of p1 = 1.10(10), and in the Stressed rigid phase (x > 31.5%) of p2 = 1.50(3). The variation of non-reversing enthalpy, ΔHnr(x), at Tg is found to display three regimes, a global minimum (~0) in the IP, and an increase outside the IP, but with sharply defined walls at xc (1) and xc(2), the two elastic thresholds deduced from optical measurements. Variation of Molar volumes, Vm(x), also displays three regimes of behavior with a global minimum in the IP and an increase outside that phase. The ΔHnr term ages over weeks outside the IP glass compositions but not inside the IP. The variation of glass transition temperature, Tg(x) in the 10% < x < 33.33% range is well described by a polynomial. A sharp cusp in ΔHnr(x) term is observed near x = 31.5(5)% , and it coincides with a maximum in the slope of Tg with x, features that we identify with the first appearance of Ge-Ge bonds with increasing x, and de (open full item for complete abstract)
Committee: Punit Boolchand PhD (Committee Chair); Bernard Goodman PhD (Committee Member); Darl McDaniel PhD (Committee Member); Marc Cahay PhD (Committee Member); Altan Ferendeci PhD (Committee Member)
Subjects: Condensation