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Degree

Master of Science, Ohio State University, Electrical and Computer Engineering, 2011.

Abstract

We used angle-resolved X-ray photoemission spectroscopy (AR-XPS), atomic force microscopy (AFM), and Kelvin probe force microscopy (KPFM) to characterize the chemical composition, depth distribution, and uniformity of 3-aminopropyltriethoxysilane (APTES) and 3-aminopropyldimethylethoxysilane (APDMES) polymer film layers on the channel surface of plasma-oxidized AlGaN/GaN heterojunction field effect transistors (HFETs). AFM and KPFM reveal smooth and uniform surfaces of plasma-oxidized AlGaN, APTES, and APDMES. AR-XPS yields 0.875 +0.036 nm for the AlGaN/GaN plasma oxide thickness, as well as 1.78±0.09 nm for the APTES versus 1.5±0.06 nm for the APDMES self-assembled monolayer. AR-XPS confirms the relative differences in APTES versus APDMES film thickness, as well as the relative spatial positioning of nitrogen versus silicon and oxygen based on their expected surface conformations. These results highlight the utility of AR-XPS to characterize the spatial distribution of elements within nanoscale organic-oxide-GaN interfaces.

Subject Headings

Electrical Engineering

Keywords

AlGaN; biosensor; heterojunction field effect transistor; HFET; X-ray Photoelectron Spectroscopy; atomic force microscopy; Kelvin probe force microscopy; 3-aminopropyltriethoxysilane (APTES); 3-aminopropyldimethylethoxysilane (APDMES)

Committee / Advisors

Leonard Brillson (Advisor)
Wu Lu (Committee Member)

Pages

58p.

Document number: osu1305639462
Permalink: http://rave.ohiolink.edu/etdc/view?acc_num=osu1305639462

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