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Degree

Master of Science, Miami University, Paper Science and Engineering, 2009.

Abstract

This thesis focuses on the study of nitrogen doped p-type ZnO. The ZnO film is grown by thermal evaporation process in a tube furnace. Two processes and two nitrogen precursors are studied for nitrogen doping. The result shows the p-type ZnO:N films were formed by thermal evaporation for the first time. The Extended X-Ray Absorption of Fine Structure (EXAFS) study indicates that N atoms are not only substitute the O atom directly. But some of them participate in N–N bonding. A reduction in electrical performance is observed for ZnO:N using 5% NO/N2 as dopant gas. This is probably due to the presence of more N-N diatoms in the film. The film conductivity depends not only on the dopant gas but also on the growth and annealing process. The photoluminence study indicates the correlation between optical property and conductivity.

Subject Headings

Chemical engineering

Keywords

p-type; ZnO; thermal evaporation; nanostructure

Committee / Advisors

Lei Kerr, PhD (Advisor)
Shashi Lalvani, PhD (Committee Member)
Steven Keller, PhD (Committee Member)

Pages

48p.

Document number: miami1250195098
Permalink: http://rave.ohiolink.edu/etdc/view?acc_num=miami1250195098

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